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1.5V Drive Pch +SBD MOSFET
TT8U1
Structure
Silicon P-channel MOSFET / schottky barrier diode
Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : U01
Each lead has same dimensions
Applications
Switching
Inner circuit
Packaging specifications
(8)
(7)
(6)
(5)
Package
Taping
Type
Code
TR
TT8U1
Basic ordering unit (pieces)
3000
? 1
(1) Anode
(2) Anode
(3) Source
(4) Gate
(1)
(2)
(3)
(4)
(5) Drain
(6) Drain
(7) Cathode
Absolute maximum ratings (Ta=25 ° C)
<MOSFET>
? 1 BODY DIODE
(8) Cathode
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
Tch
P D
? 1
? 1
? 2
± 2.4
± 9.6
? 0.8
? 9.6
150
1.0
A
A
A
A
° C
W / ELEMENT
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Symbol
V RM
V R
I F
I FSM ? 1
Tj
Limits
30
20
1.0
3.0
150
Unit
V
V
A
A
° C
Power dissipation
P D
? 2
1.0
W / ELEMENT
? 1 60H Z / 1Cycle
? 2 Mounted on a ceramic board
<MOSFET and Di>
Parameter
Symbol
Limits
Unit
Total power dissipation
Range of Storage temperature
P D
Tstg
?
1.25
? 55 to + 150
W / TOTAL
° C
? Mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.06 - Rev.A
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